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Aluminium gallium indium phosphide
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<p>Aluminium gallium indium phosphide (<a href="/facts/Aluminium/7wmR8jYE">Al</a><a href="/facts/Gallium/EucevDs9">Ga</a><a href="/facts/Indium/zRq3stVb">In</a><a href="/facts/Phosphorus/27xCeIqs">P</a>, also AlInGaP, InGaAlP, etc.) is a <a href="/facts/Semiconductor_material/zFf3mGTE">semiconductor material</a> that provides a platform for the development of <a href="/facts/Multi-junction_solar_cell/hw0qSrCr">multi-junction photovoltaics</a> and optoelectronic devices. It has a <a href="/facts/Direct_and_indirect_band_gaps/9T1kkc6y">direct</a> <a href="/facts/Bandgap/IjIeh95l">bandgap</a> ranging from ultraviolet to infrared photon energies. </p><p>AlGaInP is used in <a href="/facts/Heterostructure/mvnxnIU7">heterostructures</a> for high-brightness red, orange, green, and yellow <a href="/facts/Light-emitting_diode/gE8x4MDb">light-emitting diodes</a>. It is also used to make <a href="/facts/Diode_laser/TjHzJteV">diode lasers</a>. </p>