Silicon on insulator

<p>In <a href="/facts/Semiconductor_manufacturing/Jd23Mu1z">semiconductor manufacturing</a>, silicon on insulator (SOI) technology is fabrication of <a href="/facts/Silicon/cgWx0hdr">silicon</a> semiconductor devices in a layered silicon–insulator–silicon <a href="/facts/Substrate_(materials_science)/LwwkV6rX">substrate</a>, to reduce <a href="/facts/Parasitic_capacitance/xNHYvmoo">parasitic capacitance</a> within the device, thereby improving performance. SOI-based devices differ from conventional silicon-built devices in that the silicon junction is above an <a href="/facts/Electrical_insulator/SfSXkrh5">electrical insulator</a>, typically <a href="/facts/Silicon_dioxide/A3WILp6J">silicon dioxide</a> or <a href="/facts/Sapphire/C11GJAmm">sapphire</a> (these types of devices are called <a href="/facts/Silicon_on_sapphire/EVF6nmXN">silicon on sapphire</a>, or SOS). The choice of insulator depends largely on intended application, with sapphire being used for high-performance radio frequency (RF) and radiation-sensitive applications, and silicon dioxide for diminished short-channel effects in other microelectronics devices. The insulating layer and topmost silicon layer also vary widely with application.
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Silicon on insulator open-in-new

Silicon on insulator