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Titanium disilicide
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<h2 id="preparation">Preparation</h2> <p>Titanium disilicide can be obtained from the reaction between titanium or <a href="/facts/Titanium_hydride/q00w7qep">titanium hydride</a> with silicon.<a class="footnote-ref" id="fnref:1" href="#fn:1"><sup>1</sup></a> </p> Ti + 2 Si → TiSi2 <p>It is also possible to prepare it <a href="/facts/Aluminothermic_reaction/qk3r1z57">aluminothermically</a> by the ignition of <a href="/facts/Aluminium_powder/w9tC868U">aluminium powder</a>, <a href="/facts/Sulfur/IK0amTfM">sulfur</a>, <a href="/facts/Silicon_dioxide/A3WILp6J">silicon dioxide</a>, and <a href="/facts/Titanium_dioxide/T0KWmKcz">titanium dioxide</a> or <a href="/facts/Potassium_hexafluorotitanate/toIpvNxq">potassium hexafluorotitanate</a>, K2TiF6, by electrolysis of a melt of potassium hexafluorotitanate and titanium dioxide, or by reaction of titanium with <a href="/facts/Silicon_tetrachloride/MXnhxpVK">silicon tetrachloride</a>.<a class="footnote-ref" id="fnref:2" href="#fn:2"><sup>2</sup></a> </p><p>Another method is the reaction of <a href="/facts/Titanium_tetrachloride/bGS32SsD">titanium tetrachloride</a> with <a href="/facts/Silane/XNevDLgE">silane</a>, <a href="/facts/Dichlorosilane/3BG7FIcF">dichlorosilane</a> or silicon.<a class="footnote-ref" id="fnref:3" href="#fn:3"><sup>3</sup></a> </p> TiCl4 + 2 SiH4 → TiSi2 + 4 HCl + 2 H2 TiCl4 + 2 SiH2Cl2 + 2 H2 → TiSi2 + 8 HCl TiCl4 + 3 Si → TiSi2 + SiCl4 <h2 id="uses">Uses</h2> <p>Titanium silicide is used in the semiconductor industry. It is typically grown by means of <a href="/facts/Salicide/818ySIdC">salicide</a> technology over silicon and polysilicon lines to reduce the sheet resistance of local transistors connections. In the microelectronic industry it is typically used in the C54 phase. </p> <h2 id="references">References</h2> <ol> <li id="fn:1"><p>Brauer, Georg (1978). Handbuch der Präparativen Anorganischen Chemie, Band II. Baudler, Marianne (3rd ed.). Stuttgart: Enke. p. 1389. ISBN 978-3-432-87813-3. OCLC 310719490. <a href="978-3-432-87813-3" target="_blank">978-3-432-87813-3</a> <a href="#fnref:1" class="footnote-back-ref">↩</a></p></li> <li id="fn:2"><p>Brauer, Georg (1978). Handbuch der Präparativen Anorganischen Chemie, Band II. Baudler, Marianne (3rd ed.). Stuttgart: Enke. p. 1389. ISBN 978-3-432-87813-3. OCLC 310719490. <a href="978-3-432-87813-3" target="_blank">978-3-432-87813-3</a> <a href="#fnref:2" class="footnote-back-ref">↩</a></p></li> <li id="fn:3"><p>Pierson, Hugh O. (1999). Handbook of Chemical Vapor Deposition : Principles, Technology, and Applications (2nd ed.). Norwich, N.Y.: Noyes Publications. p. 331. ISBN 1-59124-030-1. OCLC 49708617. <a href="1-59124-030-1" target="_blank">1-59124-030-1</a> <a href="#fnref:3" class="footnote-back-ref">↩</a></p></li> </ol>